Wafer Stealth Dicing
Wafer stealth cutting laser stealth cutting through the individual pulses of the pulsed laser through the optical shaping, so that it through the surface of the material in the internal focus of the material, in the focal area of the higher energy density, the formation of multi-photon absorption nonlinear absorption effect, so that the material modification of the formation of cracks.
Each laser pulse equidistant action, the formation of equidistant damage can be formed in the material inside a modified layer. At the location of the modified layer, the molecular bonds of the material are broken, and the connections of the material become fragile and easy to separate. After cutting, the product is fully separated by stretching the carrier film and creating a chip-to-chip gap. As a dry process, laser stealth cutting offers the advantages of high speed, high quality (no or very little debris) and low kerf loss.
TGV Through-Hole Processing
TGV through-hole processing laser-induced denaturation to create TGV through-holes, the main mechanism is to induce the glass to produce continuous denaturation zone by pulsed laser, compared with the undenatured region of the glass, the denaturation of the glass in hydrofluoric acid etching rate is faster, based on this phenomenon can be made in the glass through-hole.
In the field of semiconductor packaging, TGV is generally recognized by the semiconductor industry as a key technology for next-generation three-dimensional integration, mainly because of its wide range of applications, TGV can be applied to optical communications, RF front-end, optical systems, MEMS advanced packaging, consumer electronics, medical devices, etc.; regardless of whether it is silicon-based or glass-based, through-hole metallization is an emerging vertical interconnection technology applied to the field of wafer-level vacuum packaging. Through-hole metallization technology is an emerging longitudinal interconnection technology applied in wafer-level vacuum packaging, providing a new technical way to realize the interconnection with the minimum chip-to-chip pitch, with excellent electrical, thermal and mechanical properties.
