Recently, the Jiufengshan Laboratory achieved a significant technological breakthrough in the field of indium phosphide (InP) materials, successfully developing an epitaxial growth process for 6-inch InP-based PIN structure detectors and FP structure lasers. Key performance indicators have reached internationally leading levels. This achievement marks the first domestic achievement in the field of large-scale InP material production, achieving coordinated application from core equipment to key materials, providing important support for the industrial development of optoelectronic devices.
As a core material in optical communications, quantum computing, and other fields, the industrial application of InP has long faced technical bottlenecks in large-scale production. The industry's mainstream process remains at the 3-inch stage, and the high cost makes it unable to meet the explosive growth of downstream industrial applications.
Leveraging domestic MOCVD equipment and InP substrate technology, the Jiufengshan Laboratory has overcome the challenges of controlling large-scale epitaxial uniformity and developed the first epitaxial growth process for 6-inch indium phosphide (InP)-based PIN structure detectors and FP structure lasers. Key performance indicators have reached internationally leading levels, laying the foundation for the large-scale production of 6-inch indium phosphide (InP) optical chips.
Material Properties:
• FP laser quantum well PL emission wavelength within the chip has an in-chip standard deviation of <1.5nm, and composition and thickness uniformity is <1.5%.
• PIN detector material background concentration is <4×10¹⁴cm⁻³, and mobility is >11,000 cm²/V·s.
Jiufengshan Laboratory Epitaxial Process Team
Against the rapid development of the global optoelectronics industry, demand for indium phosphide (InP) in optical communications, LiDAR, terahertz communications, and other fields is experiencing explosive growth. According to Yole Développement, the InP optoelectronics market is expected to reach US$5.6 billion in 2027, with a compound annual growth rate (CAGR) of 14%. The breakthrough in the 6-inch indium phosphide (InP) process is expected to reduce the cost of domestic optical chips to 60%-70% of the 3-inch process, helping to enhance the market competitiveness of domestic optical chips.
