Gallium nitride (GaN)-based materials are known as the third-generation semiconductors, whose spectral range covers the full wavelength band of near-infrared, visible and ultraviolet, and have important applications in the field of optoelectronics.GaN-based ultraviolet lasers have important application prospects in the fields of ultraviolet lithography, ultraviolet curing, virus detection, and ultraviolet communication due to the characteristics of short wavelengths, large photon energies, strong scattering, etc. The GaN-based UV lasers are also widely used in the fields of ultraviolet lithography, UV curing, and UV communication. However, because GaN-based UV lasers are prepared based on large mismatch heterogeneous epitaxial material technology, the material defects, doping is difficult, low quantum well luminescence efficiency, device loss, is the international semiconductor lasers in the field of the research of the difficulty, by the domestic and foreign great attention.
Semiconductor Research Institute of the Chinese Academy of Sciences, Zhao Degang researcher, Yang Jing associate researcher long-term focus on GaN-based optoelectronic materials and devices research. 2016 developed GaN-based UV laser [J. Semicond. 38, 051001 (2017)], 2022 to realize the electric injection of excitation of AlGaN UV laser (357.9 nm) [J. Semicond. 43, 1 (J. Semicond. 43, 1 (2017)]. Semicond. 43, 1 (2022)], and in the same year, a high-power UV laser with a continuous output power of 3.8 W at room temperature was realized [Opt. Laser Technol. 156, 108574 (2022)]. Recently, our team has made important progress in GaN-based high-power UV lasers, and found that the poor temperature characteristics of UV lasers are mainly related to the weak confinement of carriers in UV quantum wells, and the temperature characteristics of high-power UV lasers have been significantly improved by the introduction of a new structure of AlGaN quantum barriers and other techniques, and the continuous output power of UV lasers at room temperature has been further increased to 4.6 W, and the excitation wavelength has been increased to 386.8 nm. Figure 1 shows the excitation spectrum of the high-power UV laser, and Figure 2 shows the optical power-current-voltage (P-I-V) curve of the UV laser. the breakthrough of GaN-based high-power UV laser will promote the localization of the device and support the domestic UV lithography, ultraviolet (UV) laser industry. The breakthrough of GaN-based high-power UV laser will promote the localization process of the device and support the independent development of domestic UV lithography, UV curing, UV communication and other fields.
The results were published as "Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells" in the OECD. The results were published in Optics Letters under the title "Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells". Associate researcher Jing Yang was the first author of the paper, and researcher Degang Zhao was the corresponding author. This work was supported by several projects, including the National Key Research and Development Program of China, the National Natural Science Foundation of China, and the Strategic Pilot Science and Technology Special Project of the Chinese Academy of Sciences.
Figure 1 Excitation spectrum of high-power UV laser
Fig. 2 Optical power-current-voltage (P-I-V) curve of UV laser
