The 25th China International Hi-Tech Fair kicked off yesterday, and the innovative technology application achievements in various industries have been unveiled. Shenzhen University of Technology, a large number of high-precision "black science and technology" products are also on display, fully demonstrating the school teachers and students focusing on artificial intelligence, new materials technology, intelligent medical health, Internet of Things, energy storage batteries and other key areas of the industry, to strengthen the cooperation between industry, academia and research, and to promote the fruitful results of scientific and technological innovation.
On November 16, Ruan Shuangchen, President of Shenzhen University of Technology, came to the school's booth, observed the results of the school's exhibits one by one, and carefully asked about the current status of the project's research, highlights of technological innovation and its application, he encouraged the researchers to make persistent efforts to accelerate the industrialization of scientific research results, and put forward higher requirements for the transformation and application of the school's high and new technology results.
At the same time, new good news came from the university's scientific research work. Recently, the national key research and development project team led by Prof. Ruan Shuangchen of Shenzhen University of Technology, under the support of the project of "Crystal Thin Wafer Processing and Preparation of New Generation of Gain Devices" of the National Key Research and Development Program of the Ministry of Science and Technology, has made important progress in research on the key scientific issues of crystal thin wafer processing and preparation of new generation of gain devices, and is the first one to realize the breakthrough of We are the first one in China to realize the crystal package of Yb:YAG wafer with diameter >20mm, and design the 48-stroke pumping system of kilowatt class.
High-power ultrafast lasers are used in advanced manufacturing, information, microelectronics, medical, energy, military and other fields, and the related scientific and technological research is essential to promote the development of national strategies. Laser gain device is the core basic material of high power ultrafast laser, which has been highly concerned by all countries in the world. Thin-film lasers with excellent beam quality and high efficiency of optical-to-optical conversion efficiency have been widely used in many fields such as industrial manufacturing and basic scientific research. However, the lack of key core technologies such as precision processing of thin-film crystals, design and packaging of heat sink systems, and preparation of gain devices has seriously limited the further development of high-power thin-film lasers in China.
Relying on the Key Laboratory of Advanced Optical Precision Manufacturing Technology for Guangdong Universities, Shenzhen Key Laboratory of Laser Engineering, Sino-German Institute of Intelligent Manufacturing, and College of Engineering Physics, Shenzhen University of Technology has been carrying out the research on thin-flake laser technology since 2021, and adopted the self-developed thin-flake crystals with a diameter of 12 mm and regenerative amplification technology at the beginning of 2022 to realize the high power regenerative amplification of the resonance cavity through the chromatic dispersion compensation and the By controlling the dispersion compensation and nonlinear effect of the high-power regenerative amplification resonant cavity, the laser output of single pulse energy＞500μJ, pulse width＜7.5ps, average power＞200W is realized, especially the excellent performance of beam quality M2＜1.1 and optical-to-optical conversion efficiency＞50%, which lays a solid foundation for the efficient nonlinear frequency conversion outside the cavity.
The project team adopted wavelength-locked 969nm "zero-phonon line" pumping to realize the highest continuous output power >1300W, the maximum optical-to-optical conversion efficiency of nearly 80%, and its excellent performance has laid an important foundation for the research of kilowatt-class average power and ultrafast thin-film lasers of 100 mJ.
(a) 1000W@969nm pumping (b) 2000W@969nm pumping
Through the key R&D projects of the Ministry of Science and Technology, the project team is oriented to the national industrial security and major engineering construction needs, breakthroughs in the application of high-power laser materials and devices key core technologies, breakthroughs in the innovation chain, breakthroughs in strategic high-power laser crystal preparation and application of common key technologies in each link, to improve China's core laser crystal materials and devices in the field of information, energy, transportation, high-end equipment and other areas of independent control capabilities, to serve the new energy, 3C electronics, and high-end equipment. It will improve the capability of independent control of core laser crystal materials and devices in the fields of information, energy, transportation and high-end equipment in China, and serve the development of new energy, 3C electronics, high-end manufacturing and other high-tech industries.
